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this is information on a product in full production. march 2012 doc id 018868 rev 2 1/20 20 stb11n52k3, stf11n52k3 STP11N52K3 n-channel 525 v, 0.41 , 10 a supermesh3? power mosfet in d2pak,to-220fp and to-220 packages datasheet ? production data features 100% avalanche tested extremely high dv/dt capability gate charge minimized very low intrinsic capacitance improved diode reverse recovery characteristics zener-protected applications switching applications description these devices are n-channel power mosfets made using the supermesh3? technology that is obtained via improvements applied to stmicroelectronics? supermesh? technology combined with a new optimized vertical structure. the resulting transistor has an extremely low on resistance, superior dynamic performance and high avalanche capability, making it especially suitable for the most demanding applications. figure 1. internal schematic diagram order codes v dss r ds(on) max. i d p w stb11n52k3 525 v < 0.51 10 a 125 w stf11n52k3 30 w STP11N52K3 125 w to-220 to-220fp 1 2 3 d2pak 1 2 3 tab 1 3 tab d(2,tab) g(1) s(3) am01476v1 table 1. device summary order codes marking packages packaging stb11n52k3 stf11n52k3 STP11N52K3 11n52k3 d2pak to-220fp to-220 tape and reel tu b e tu b e www.st.com
contents stb11n52k3, stf11n52k3, STP11N52K3 2/20 doc id 018868 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
stb11n52k3, stf11n52k3, STP11N52K3 electrical ratings doc id 018868 rev 2 3/20 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit to-220, d2pak to-220fp v ds drain- source voltage 525 v v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25 c 10 10 (1) 1. limited only by maximum temperature allowed a i d drain current (continuous) at t c = 100 c 6 6 (1) a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 40 40 (1) a p tot total dissipation at t c = 25 c 125 30 w i ar avalanche current, repetitive or not- repetitive (pulse width limited by t j max) 5a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 170 mj v esd(g-s) gate source esd(hbm-c = 100 pf, r = 1.5 k ) 2500 v dv/dt (3) 3. i sd 10 a, di/dt 400 a/s, v dd = 80% v (br)dss peak diode recovery voltage slope 12 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t = 1 s; t c = 25 c) 2500 t j t stg operating junction temperature storage temperature - 55 to 150 c table 3. thermal data symbol parameter value unit to-220 to-220fp d2pak r thj-case thermal resistance junction-case max 1 4.17 1 c/w r thj-amb thermal resistance junction-amb max 62.50 c/w r thj-pcb thermal resistance junction-pcb max 30 c/w t j maximum lead temperature for soldering purpose 300 c/w
electrical characteristics stb11n52k3, stf11n52k3, STP11N52K3 4/20 doc id 018868 rev 2 2 electrical characteristics (tcase =25 c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 525 v i dss zero gate voltage drain current (v gs = 0) v ds = 525 v v ds = 525 v, t c =125 c 1 50 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v; v ds =0 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 50 a 3 3.75 4.5 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 5 a 0.41 0.51 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 50 v, f = 1 mhz, v gs = 0 - 1400 110 22 - pf pf pf c oss eq. (1) 1. c oss eq. is defined as a constant equivalent capac itance giving the same charging time as c oss when v ds increases from 0 to 80% v ds equivalent output capacitance v ds = 0 to 420 v, v gs = 0 - 83 - pf r g gate input resistance f=1 mhz open drain 1 3 7 q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 420 v, i d = 10 a, v gs = 10 v (see figure 18) - 51 8 32 - nc nc nc table 6. switching times symbol parameter test conditions min. typ. max unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off-delay time fall time v dd = 210 v, i d = 5 a, r g = 4.7 , v gs = 10 v (see figure 17) - 7 18 281 42 - ns ns ns ns
stb11n52k3, stf11n52k3, STP11N52K3 electrical characteristics doc id 018868 rev 2 5/20 the built-in back-to-back zener diodes have specifically been designed to enhance not only the device?s esd capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. in this respect the zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device?s integrity. these integrated zener diodes thus avoid the usage of external components. table 7. source drain diode symbol parameter test conditions min. typ. max unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 10 40 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 10 a, v gs = 0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 10 a, di/dt = 100 a/s v dd = 60 v (see figure 19) - 270 2700 20 ns nc a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 10 a, di/dt = 100 a/s v dd = 60 v t j = 150 c (see figure 19) - 320 3400 22 ns nc a table 8. gate-source zener diode symbol parameter test conditions min. typ. max. unit bv gso gate-source breakdown voltage igs= 1 ma (open drain) 30 - - v
electrical characteristics stb11n52k3, stf11n52k3, STP11N52K3 6/20 doc id 018868 rev 2 2.1 electrical characteristics (curves) figure 2. safe operating area for to-220, d2pak figure 3. thermal impedance for to-220, d2pak figure 4. safe operating area for to-220fp figure 5. thermal impedance for to-220fp figure 6. output characteristics figure 7. transfer characteristics i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e am09112v1 i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e 0.01 am0911 3 v1 i d 15 10 5 0 0 10 v d s (v) 20 (a) 5 15 25 20 5v 6v 7v v g s =10v am09114v1 i d 10 5 0 0 4 v g s (v) (a) 2 5 15 20 v d s =15v 1 3 8 6 9 7 am09115v1
stb11n52k3, stf11n52k3, STP11N52K3 electrical characteristics doc id 018868 rev 2 7/20 figure 8. gate charge vs gate-source voltage figure 9. static drain-source on resistance figure 10. capacitance variations figure 11. output capacitance stored energy figure 12. normalized gate threshold voltage vs temperature figure 13. normalized on resistance vs temperature v g s 6 4 2 0 0 q g (nc) (v) 8 20 10 v dd =420v i d =10a 40 12 3 00 200 100 0 400 v d s 60 3 50 250 150 50 am09116v1 r d s (on) 0.42 0.40 0. 38 0. 3 6 0 4 i d (a) ( ) 2 6 0.44 0.46 0.4 8 0.50 v g s =10v 8 0.52 0.54 10 12 am09117v1 c 1000 100 10 1 0.1 10 v d s (v) (pf) 1 100 ci ss co ss cr ss am0911 8 v1 e o ss 3 2 1 0 0 100 v d s (v) ( j) 400 4 200 3 00 5 6 500 am09119v1 v g s (th) 1.00 0.90 0. 8 0 0.70 -75 t j (c) (norm) -25 1.10 75 25 125 am09120v1 r d s (on) 1.5 1.0 0.5 0.0 -50 0 t j (c) (norm) -25 75 25 50 100 2.5 2.0 i d =1.2a am09121v1
electrical characteristics stb11n52k3, stf11n52k3, STP11N52K3 8/20 doc id 018868 rev 2 figure 14. source-drain diode forward characteristics figure 15. normalized b vdss vs temperature figure 16. maximum avalanche energy vs starting tj v s d 0 2 i s d (a) (v) 1 5 3 4 0 0.1 0.2 0. 3 0.4 0.5 0.6 t j =-50c t j =150c t j =25c 0.7 0. 8 0.9 am0912 3 v1 bv d ss -75 t j (c) (norm) -25 75 25 125 0.90 0.95 1.00 1.05 1.10 am09122v1 e a s 0 40 t j (c) (mj) 20 100 60 8 0 0 20 40 60 8 0 120 140 100 120 140 160 1 8 0 i d =5 a v dd =50 v am09124v1
stb11n52k3, stf11n52k3, STP11N52K3 test circuits doc id 018868 rev 2 9/20 3 test circuits figure 17. switching times test circuit for resistive load figure 18. gate charge test circuit figure 19. test circuit for inductive load switching and diode recovery times figure 20. unclamped inductive load test circuit figure 21. unclamped inductive waveform figure 22. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
package mechanical data stb11n52k3, stf11n52k3, STP11N52K3 10/20 doc id 018868 rev 2 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
stb11n52k3, stf11n52k3, STP11N52K3 package mechanical data doc id 018868 rev 2 11/20 table 9. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d2.5 2.75 e 0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g 4.95 5.2 g1 2.4 2.7 h10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2
package mechanical data stb11n52k3, stf11n52k3, STP11N52K3 12/20 doc id 018868 rev 2 figure 23. to-220fp drawing 7012510_rev_k_b
stb11n52k3, stf11n52k3, STP11N52K3 package mechanical data doc id 018868 rev 2 13/20 table 10. to-220 type a mechanical data dim. mm min. typ. max. a4.40 4.60 b0.61 0.88 b1 1.14 1.70 c0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e2.40 2.70 e1 4.95 5.15 f1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p3.75 3.85 q2.65 2.95
package mechanical data stb11n52k3, stf11n52k3, STP11N52K3 14/20 doc id 018868 rev 2 figure 24. to-220 type a drawing 00159 88 _typea_rev_ s
stb11n52k3, stf11n52k3, STP11N52K3 package mechanical data doc id 018868 rev 2 15/20 table 11. d2pak (to-263) mechanical data dim. mm min. typ. max. a4.40 4.60 a1 0.03 0.23 b0.70 0.93 b2 1.14 1.70 c0.45 0.60 c2 1.23 1.36 d8.95 9.35 d1 7.50 e 10 10.40 e1 8.50 e2.54 e1 4.88 5.28 h 15 15.85 j1 2.49 2.69 l2.29 2.79 l1 1.27 1.40 l2 1.30 1.75 r0.4 v2 0 8
package mechanical data stb11n52k3, stf11n52k3, STP11N52K3 16/20 doc id 018868 rev 2 figure 25. d2pak (to-263) drawing figure 26. d2pak footprint (a) a. all dimension are in millimeters 0079457_t 16.90 12.20 9.75 3 .50 5.0 8 1.60 footprint
stb11n52k3, stf11n52k3, STP11N52K3 package mechanical data doc id 018868 rev 2 17/20 5 package mechanical data table 12. d2pak (to-263) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base qty 1000 p2 1.9 2.1 bulk qty 1000 r50 t 0.25 0.35 w 23.7 24.3
package mechanical data stb11n52k3, stf11n52k3, STP11N52K3 18/20 doc id 018868 rev 2 figure 27. tape for d2pak (to-263) figure 28. reel for d2pak (to-263) p1 a0 d1 p0 f w e d b0 k0 t u s er direction of feed p2 10 pitche s c u m u l a tive toler a nce on t a pe +/- 0.2 mm u s er direction of feed r bending r a di us top cover t a pe am0 88 52v2 a d b f u ll r a di us g me asu red a t h ub c n reel dimen s ion s 40mm min. acce ss hole at s lot loc a tion t t a pe s lot in core for t a pe s t a rt 25 mm min. width am0 88 51v2
stb11n52k3, stf11n52k3, STP11N52K3 revision history doc id 018868 rev 2 19/20 6 revision history table 13. document revision history date revision changes 20-may-2011 1 first release. 27-mar-2012 2 inserted max and min. values for r g in ta bl e 5 . updated section 4: package mechanical data .
stb11n52k3, stf11n52k3, STP11N52K3 20/20 doc id 018868 rev 2 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by two authorized st representatives, st products are not recommended, authorized or warranted for use in military, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2012 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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